4’’ 4H-Semi High-Purity SIC Wafers Prime Grade Semiconductor EPI Substrates
Description of HP 4H-semi SIC:
1. The high purity semi-insulating 4H-SiC (silicon carbide) wafers are very ideal semiconductor materials.
2. Semi-insulated 4H-SiC sheet is prepared by high temperature pyrolysis, crystal growth and cutting process.
3. High-purity semi-insulated 4H-SiC sheets have lower carrier concentrations and higher insulation properties.
4. 4H-SiC is a hexagonal lattice. This crystal structure gives 4H-SiC excellent physical and electrical properties.
5. The process requires high purity of raw materials and precision to ensure the silicon wafer a consistent structure.
Features of HP 4H-semi SIC:
The high purity semi-insulated 4H-SiC (silicon carbide) sheet is an ideal semiconductor material:
1. Band gap width: Generally, 4H-SiC has a wide band gap width of about 3.26 electron volts (eV).
2. Due to its thermal stability and insulation properties, 4H-SiC can operate in a wide temperature range.
3. 4H-SiC has a high resistance to radiation used in nuclear energy and high energy physics experiments.
4. 4H-SiC has high hardness and mechanical strength, which makes it have excellent stability and reliability.
5. 4H-SiC has a high electron mobility in the range of 100-800 square centimeters /(volts · second) (cm^2/(V·s).
6. High thermal conductivity: 4H-SiC has a very high thermal conductivity, about 490-530 watts/m-kelle (W/(m·K).
7. High voltage resistance: 4H-SiC has excellent voltage resistance, making it suitable for high voltage applications.
Technical Parameters of HP 4H-semi SIC:
| | Production | Research | Dummy |
| Type | 4H | 4H | 4H |
| Resistivity9(ohm·cm) | ≥1E9 | 100% area＞1E5 | 70% area＞1E5 |
| Diameter | 99.5~100mm | 99.5~100mm | 99.5~100mm |
| Thickness | 500±25μm | 500±25μm | 500±25μm |
| On-axis | <0001> | <0001> | <0001> |
| Off-axis | 0± 0.25° | 0± 0.25° | 0± 0.25° |
| Secondary flat length | 18± 1.5mm | 18± 1.5mm | 18± 1.5mm |
| TTV | ≤5μm | ≤10μm | ≤20μm |
| LTV | ≤2μm(5mm*5mm) | ≤5μm(5mm*5mm) | NA |
| Bow | -15μm~15μm | -35μm~35μm | -45μm~45μm |
| Warp | ≤20μm | ≤45μm | ≤50μm |
| Ra(5μm*5μm) | Ra≤0.2nm | Ra≤0.2nm | Ra≤0.2nm |
| Micropipe Density | ≤1ea/cm2 | ≤5ea/cm2 | ≤10ea/cm2 |
| Edge | Chamfer | Chamfer | Chamfer |
Applications of HP 4H-semi SIC:
High purity semi-insulated 4H-SiC (silicon carbide) sheets are widely used in many fields:
1. Optoelectronic devices: Semi-insulated 4H-SiC is widely used in the manufacture of optoelectronic devices.
2. Rf and microwave devices: The high electron mobility and low loss characteristics of semi-insulated 4H-SiC.
3. Other fields: Semi-insulated 4H-SiC also has some applications in other fields, such as irradiation detectors.
4. Due to the high thermal conductivity and excellent mechanical strength of 4H-semi SiC in extreme temperature.
5. Power electronic devices: Semi-insulated 4H-SiC is widely used in the manufacture of high-power power devices.
Other related product HP 4-H-semi SIC:
4H-N SIC
FAQ about HPSI 4H-semi SIC:
Q: What is the Brand Name of HPSI 4h-semi SIC?
A: The Brand Name of HPSI 4h-semi SIC is ZMSH.
Q: What is the Certification of HPSI 4h-semi SIC?
A: The Certification of HPSI 4h-semi SIC is ROHS.
Q: Where is the Place of Origin of HPSI 4h-semi SIC?
A: The Place of Origin of HPSI 4h-semi SIC is CHINA.
Q: What is the MOQ of HPSI 4h-semi SIC at one time?
A: The MOQ of HPSI 4h-semi SIC is 25pcs at one time.
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4" 4H-Semi High Purity SIC Wafers Prime Grade Semiconductor EPI Substrates Images
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